@InProceedings{RamirezRamosCoraTrav:2015:ChPuPE,
               author = "Ramirez Ramos, Marco Antonio and Corat, Evaldo Jos{\'e} and 
                         Trava-Airoldi, Vladimir Jesus",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)}",
                title = "Characterization of a Pulsed-DC PECVD System with Active Screen 
                         for DLC Films Growth",
                 year = "2015",
         organization = "The International Conference on Metallurgical Coatings and Thin 
                         Films, 42. (ICMCTF).",
             abstract = "Active Screen technique, as an additional cathode, is an advanced 
                         technology used for metal surface plasma nitrating with apparent 
                         advantages over conventional one. Side effects such as arcing or 
                         other way of plasma instability could be considerably reduced with 
                         the use of the active screen technique and thus dealing to an 
                         improved surface quality. Because of the absence of information 
                         concerning the active screen technique used for DLC growth, 
                         specially on different kinds of steels a new and deeper studies 
                         about the process will be considered.[1] Active screen coupled to 
                         PECVD system allows obtaining DLC films with lower pressure, lower 
                         temperature and low power energy consumption, achieving an 
                         inferior production costs with higher adhesion and better quality 
                         films in terms of hardness, density and finishing [2]. Also, the 
                         homogeneity of the coating in large area is improved [3]. In this 
                         work cylindrical actives screens are home manufactured with the 
                         same diameter and different mesh sizes. The temperature variation 
                         on ss 420 substrate as a function of the time in argon plasma 
                         discharge, gas pressure inside of the chamber and screen mesh 
                         sizes were carefully measured. Keeping constant the bias and gas 
                         flow, a very interesting results show that the temperature rise 
                         faster for higher screen mesh even at very low argon pressure in 
                         the plasma discharge and the threshold mesh size and lower 
                         pressure value was found. Also a strong dependence of the final 
                         temperature with the gas pressure reveal the possibilities of 
                         obtaining a better conditions for DLC growth than in the 
                         conventional PECVD system. In order to show a great performance of 
                         this new system a very good DLC films were obtained with good 
                         mechanical, trybological and chemical properties. References [1] 
                         C.X. Li, J. Georges, X.Y. Li, Surf. Eng. 18 (2002) 453458. [2] 
                         C.X. Li, T. Bell, H. Dong, Surf. Eng. 18 (2002) 174181. [3] S. 
                         Corujeira Gallo, H. Dong, Vacuum 84 (2009) 321325.",
  conference-location = "San Diego, California",
      conference-year = "20-24 apr.",
             language = "en",
        urlaccessdate = "28 abr. 2024"
}